In this study, we observe useful properties of V-1.1- and V0.8N0.4-bearing copper (Cu) films deposited on barrierless silicon (Si) substrates by a cosputtering process. The Cu-98.8(V0.8N0.4), or Cu(VNx) for brevity, films exhibit low resistivity (2.9 mu Omega cm) and minimal leakage current after annealing at temperatures up to 700 degrees C for 1 h; no detectable reaction occurs at the Cu/Si interface. These observations confirm the high thermal stability of Cu(VNx) films. Furthermore, since these films have good adhesion features, they can be used for barrierless Cu metallization. (C) 2010 Elsevier B. V. All rights reserved.