Epitaxial In2O3 films have been deposited on Y-stabilized ZrO2 (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 degrees C). The film deposited at 650 degrees C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In2O3(100)parallel to YSZ(1 0 0) with In2O3[001]parallel to YSZ[0 0 1]. The Hall mobility of the single-crystalline In2O3 film deposited at 650 degrees C is as high as 66.5 cm(2) V-1 s(-1) with carrier concentration of 1.5 x 10(19) cm(-3) and resistivity of 6.3 x 10(-3) Omega cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%. (C) 2010 Elsevier B. V. All rights reserved.