The development of new photovoltaic approach to improve costs and efficiencies is focused on the new materials and new technologies. InGaP is, in this sense, a key material for solar conversion. In particular, in the solar concentration approach, this material is part of multiple junction solar cells. Its low lattice mismatch with germanium and its adequate bandgap make it very promising. This paper shows how compositional modulation can affect the InGaP emitter and the AlGaAs tunnel junctions. The influence of the growth conditions, on the compositional modulation and misfit and threading dislocations, in In0.49Ga0.51P layers is demonstrated by TEM on purposely grown single InGaP layers. High resolution electron microscopy (HREM) intensity profiles showed no elastic lattice related modulation. (C) 2010 Elsevier B.V. All rights reserved.