The atomic arrangements in zinc blende structured GaNxAs1-x thin films coherently grown on V-grooved substrates are theoretically investigated using empirical interatomic potentials and Monte Carlo simulation. The resultant atomic arrangements in GaNxAs1-x strongly depend on concentration x and substrate lattice parameter a(sub). Surface segregation of As or N is mainly found in GaNxAs1-x with large lattice mismatch to the substrate. On the other hand, the novel atomic arrangements such as layered segregation or ordered structure are found in GaNxAs1-x at the specific region such as (x, a(sub)) = (0.5, 5.3), (0.3, 5.3), and (0.3, 5.1). This specific region corresponds to that with negative excess energy and with sufficient N and As atoms remaining in thin film layers even after their surface segregation. The formation of the novel atomic arrangements is discussed in terms of bond lengths in the surface layers. These results suggest that various novel atomic arrangements in alloy semiconductor thin films appear depending on x and asub which control degree of lattice constraint. (C) 2009 Elsevier B. V. All rights reserved.