화학공학소재연구정보센터
Advanced Materials, Vol.22, No.32, 3598-3598, 2010
Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)
An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.