High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large field-effect mobility of 110 cm(2)V(-1)s(-1), a current on/off ratio of 10(4), and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.