Advanced Materials, Vol.21, No.47, 4821-4821, 2009
Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors
A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p-to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure).