Nanoscale vertical thin-film transistors (VTFTs) are demonstrated employing a new ultrathin silicon nitride (SiNx) gate dielectric for applications in high-resolution active matrix flat panel electronics. Illustrated are the cross-section schematic and SEM image of a 500nm channel length VTFT with a 50 nm thick SiNx gate dielectric. The device demonstrates excellent gate control with gate leakage as low as 0.1 nA cm(-2).