저온플라즈마에 의한 질소산화물의 제거에 관한 연구

박희재; 이내우; 최재욱; 임우섭; Hei-Jae Park; Nae-Woo Lee; Jae-Wook Choi; Woo-Sub Lim

Korean Chemical Engineering Research, Vol.48, No.4, 540-543, August, 2010

Export Citation

저온플라즈마에 의한 질소산화물의 제거에 관한 연구

A Study on Removal of NOx by Low Temperature Plasma

박희재, 이내우, 최재욱^†, 임우섭¹

부경대학교 안전공학부, 608-739 부산시 남구 용당동 산 100
¹한국소방산업기술원 소방산업기술연구소, 210-100 강원도 삼척시 교동 산 171-13

Hei-Jae Park, Nae-Woo Lee, Jae-Wook Choi^†, and Woo-Sub Lim¹

School of Safety Engineering, Pukyong National University, San 100, Yongdang-dong, Nam-gu, Busan 608-739, Korea
¹Korea Fire Industry Technology Institute, San 171-13, Gyo-dong, Samcheok-si, Gangwon-do 210-100, Korea

E-mail:

초록

가스 중에 포함되어 있는 질소산화물을 안전하게 처리하기 위하여 저온 플라즈마 반응기를 제작하여 반응기내에 공급되는 반응물질의 유량과 방전주입전력량에 대한 장치의 특성을 실험적으로 조사하고, 유효성을 검정하였다. 반응가스는 NO/N2 혼합가스와 N2/O2 혼합가스를 이용하여 초기 NO 농도를 설정하고, 유속을 1~4 l/min으로 공급하였다. 반응물질의 유량이 증가할 때 NO의 감소율이 낮고, 방전주입전력이 높을 때 NO의 분해가 용이하였다. 또한 반응물질의 지연시간이 길고 방전주입전력이 높을수록 NO의 분해에너지 효율이 높았으며, 유량이 많고 방전 주입 전력량이 증가할수록 오존의 생성량이 증가하였다.

In this study, we made low temperature plasma reactor in order to treat safely NOx which included in the gas. We investigated experimently and inspected efficiency characteristics of equipment about flow rate of reactant material and discharge input power which supplied into reactor. As a reaction gas, by using mixture gas of NO/N2 and N2/O2, we setted up initial NO concentration and supplied the speed of a current to 1~4 l/min. When the amount of flow increased, reduction rate of NO was low. Also when discharge input power was high, decomposition of NO was easy. Also the longer delay time of reaction material and the higher discharge input power was, the higher decomposition energy efficiency was. And when the amount of flow was much, and the more discharge input power increased, the more ozone generated.

Keywords:Low Temperature Plasma;Discharge Input Power;Delay Time;Ozone Generated

[References]

Penetrante BM, Hsiao MC, Merritt BT, Vogtlin GE, Wallman PH, IEEE Trans. Plasma Sci., 23, 679 (1995)
Chang JS, Myint T, Chakrabarti A, Miziolek A, Jpn. J. Appl. Phys. Vol. 36 (1997)
Gasparik R, Gasparikova M, Yamabe C, Satoh S, Ihara S, Jpn. J. Appl. Phys. Vol. 37 (1998)
Chang JS, Kelly AJ, Crowley JM, Marcel Dekker, New York (1995)
Chae OJ, Chun YN, Kim KY, Korean Society of Evinronmental Engineers, Vol. 5, No. 3 (2000)
Higashi M, Fujii K, Journal of Electrostatics, Vol 21, No. 1 (1997)
Ito T, Proceedings of the Institiute of Electrostatics Japan, Vol. 21-1 (1997)
Urashima K, Chang JS, Ito T, IEEE Transactions on Industry Applications, 33(4) (1997)
Veldhuizen EM, Rutgers WR, Bityurin VA, Plasma Chemistry and Plasma Processing, Vol. 16, No. 2 (1996)
Oda T, Kato T, Takahashi T, Shimizu K, Journal of Electrostatics, 42 (1997)
Stephen RT, McGraw-Hill International Editions (2006)

[Referenced By]

[1] Penetrante BM, Hsiao MC, Merritt BT, Vogtlin GE, Wallman PH, IEEE Trans. Plasma Sci., 23, 679 (1995)

[2] Chang JS, Myint T, Chakrabarti A, Miziolek A, Jpn. J. Appl. Phys. Vol. 36 (1997)

[3] Gasparik R, Gasparikova M, Yamabe C, Satoh S, Ihara S, Jpn. J. Appl. Phys. Vol. 37 (1998)

[4] Chang JS, Kelly AJ, Crowley JM, Marcel Dekker, New York (1995)

[5] Chae OJ, Chun YN, Kim KY, Korean Society of Evinronmental Engineers, Vol. 5, No. 3 (2000)

[6] Higashi M, Fujii K, Journal of Electrostatics, Vol 21, No. 1 (1997)

[7] Ito T, Proceedings of the Institiute of Electrostatics Japan, Vol. 21-1 (1997)

[8] Urashima K, Chang JS, Ito T, IEEE Transactions on Industry Applications, 33(4) (1997)

[9] Veldhuizen EM, Rutgers WR, Bityurin VA, Plasma Chemistry and Plasma Processing, Vol. 16, No. 2 (1996)

[10] Oda T, Kato T, Takahashi T, Shimizu K, Journal of Electrostatics, 42 (1997)

[11] Stephen RT, McGraw-Hill International Editions (2006)