We have studied the fabrication of ring oscillator and shift resistor using p-type metal-oxide-semiconductor (pMOS) TFTs based on silicon-on-glass (SiOG). The TFT exhibited field-effect mobility of 183 cm(2)/V s, threshold voltage of -0.30 V and gate voltage swing of 0.14 V/dec. The 23-stage ring oscillator made of pMOS TFTs exhibited a propagation delay time of 2.61 ns at the supply voltage of 10 V. On the other hand, the rise and fall times of the shift resistor were found to be 2.8 mu s and 1.4 mu s, respectively. Therefore, high performance integrated circuits can be possible on SiOG using pMOS technologies. (C) 2009 Elsevier Ltd. All rights reserved.