We demonstrate the fabrication of a 3D memory architecture based on the resistive switching effect. Resistive memory (RRAM) is under wide investigation since it is non-volatile, promises fast operation and can be integrated into high density architectures like crossbar arrays. Here, silver-doped methyl-silsesquioxane (MSQ) is integrated in crossbar array structures for the following reasons. First, the material at the same time provides good planarization properties so that emerging lithography techniques like nanoimprint lithography (NIL) are applicable. Second, we could prove that silver-doped MSQ can be used as resistive switching material on the nano scale. Using this technique, crossbar arrays with a minimum feature size of only 100 nm are stacked on each other and the functionality is proved by electrical characterization. This comprises the doubling of the memory density and furthermore even higher integration is in principle not limited by this technique, while the CMOS overhead increases only slightly. (C) 2009 Elsevier Ltd. All rights reserved.