We have presented a theoretical calculation of the scattering intensity for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (10) phonon modes in GaAs/Ga1-xAlxAs quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Singularities in the Raman spectra for various x are found and interpreted. The numerical results are also compared with that of experiments. (C) 2008 Published by Elsevier Ltd.