A quantum mechanical model of electron mobility for scaled NMOS transistors with ultra-thin SiO2/HfO2 dielectrics (effective oxide thickness is less than 1 nm) and metal gate electrode is presented in this paper. The inversion layer carrier density is calculated quantum mechanically due to the consideration of high transverse electric field created in the transistor channel. The mobility model includes: (1) Coulomb scattering effect arising from the scattering centers at the semiconductor-dielectric interface, fixed charges in the high-K film and bulk impurities, and (2) surface roughness effect associated with the semiconductor-dielectric interface. The model predicts the electron mobility in MOS transistors will increase with continuous dielectric layer scaling and a fixed volume trap density assumption in high-K film. The Coulomb scattering mobility dependence on the interface trap density, fixed charges in the high-K film, interfacial oxide layer thickness and high-K film thickness is demonstrated in the paper. (C) 2008 Elsevier Ltd. All rights reserved.