To reduce the electrothemal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is Studied. The AIN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a Suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AIN as thick as 4 mu m are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance. (C) 2008 Elsevier Ltd. All rights reserved.