Thin-film inverters based on high mobility microcrystalline silicon thin-film transistors (TFTs) with different channel lengths were realized. The NMOS enhancement load saturation mode (NELS) inverters were prepared by plasma-enhanced chemical vapor deposition at temperatures below 200 degrees C. The realization of microcrystalline silicon thin-film inverters facilitates the direct integration of column and row drivers and circuitry on display backpanels. The influence of the transistor properties and underlying contact effects on the performance of the inverters will be discussed. (c) 2008 Elsevier Ltd. All rights reserved.