Zinc oxide (ZnO) has attracted much attention for a long time since it shows wide range of application such as ultra-violet absorbents, photocatalysts, photo-detector, and transistors, due to its wide band gap (3.37 eV) and large exciton binding energy (60 mV). Wide varieties of synthesis techniques have thus been developed to produce this material in different forms. They are, for instance, sol-gel process, hydrothermal process, hydrothermal process, and chemical vapor deposition. The wide band gap of ZnO can be reduced by controllably introducing non-stoichiometry and/or appropriate dopants for actual application in photocatalysts working at visible range. Recently, doping of ZnO could be achieved by replacing Zn2+ions with the ions of elements of higher valency such as Ga, Al, Co and In, or with the ions of transition metals, which was inducing drastic changes in its electrical and optical properties. ZnO and Aluminum doped ZnO particles were prepared by polyol process in different conditions. The effect of zinc concentration and dopant on structural, morphological, optical properties was investigated.