Selective-area atomic layer deposition (ALD) was studied using poly (vinyl pyrrolidone) (PVP) films as growth-preventing mask layers. The PVP films were prepared by spin coating and patterned by UV lithography. The PVP films were tested in several ALD processes: iridium, platinum, ruthenium, Al2O3, and ZrO2. The deposition temperatures were 250-300 degrees C. In general, the PVP film passivated the surface against the noble metal processes, but the oxide films grew on PVP. However, the oxide films did not grow through the PVP film on the substrate surface and, therefore, the films could still be patterned, though with more of a lift-off method rather than with pure selective-area ALD. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3250936] All rights reserved.