We investigated the electrical and structural properties of p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs), which were fabricated using platinum (Pt) silicidation through an oxide technique coupled with rapid thermal annealing or furnace annealing process. The furnace-annealed SB-MOSFETs showed a larger on/off current ratio (>10(6)) with a lower reverse leakage current level (< 10(-8) mu A/mu m) compared with the rapid-thermal-annealed ones. The superior device performance of the furnace-annealed SB-MOSFETs could be attributed to the smooth surface morphology and excellent interface uniformity of PtSi films in source/drain regions, caused by a densified SiOx interlayer to effectively control the Pt flux toward the silicon-on-insulator film.