The effects of process parameters on electrochemical characteristics of silicon wafers during chemical mechanical polishing (CMP) as well as under static conditions were studied by dc polarization and open-circuit potential (OCP) techniques. All the process parameters strongly affected the electrochemical behaviors and polishing rates. The corrosion current density first increased rapidly when raising polishing pressure, rotation speed, and silica solid content and then began to slow down. The polishing rate declined gradually with the increase of polishing time due to the pad surface plastic deformation during CMP. Also, the CMP process of silicon wafers could be considered as a sequential formation and removal of a film, which was confirmed by testing the change of OCP. A low surface roughness could be obtained after CMP. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3097182] All rights reserved.