HfCxNy films were grown at a low temperature (450 degrees C) by metallorganic chemical vapor deposition (MOCVD) using Hf(N(CH3)(2))(4) with and without NH3 as a reactant. The resistivity of the films was found to be dependent on the chemical composition and structure of the films. Postdeposition annealing (PDA) generally decreased the resistivity of the HfCxNy films. The elimination of residual carbon and oxygen through the evolution of CO2 gases and the formation of a HfxCy phase in the film by PDA were the main reasons for the decreased resistivity. The HfxCy phase in the film contributed to the electrical conductivity, whereas most of the HfxNy in the film existed as an insulating phase (Hf3N4). The introduction of a N-2/H-2 reduction gas during film growth reduced the oxygen concentration in the film. However, the addition of NH3 gas suppressed the formation of HfxCy and produced an insulating Hf3N4.