Mn2+ -activated Zn2GeO4 phosphor thin films were deposited on quartz substrates using the radio frequency magnetron sputtering technique. The crystallanity, composition ratio, and luminescent behavior of the films were highly sensitive to the deposition parameters. Zn2GeO4:Mn2+ films grown on amorphous substrates were polycrystalline in nature, whereas those deposited on the ZnO buffer layer were highly oriented along the (220) plane under similar deposition conditions. Tauc plot analysis of the Zn2GeO4:Mn2+ films grown on ZnO/quartz substrate exhibits strong subband absorption in comparison to the Zn2GeO4:Mn2+ film deposited on quartz substrate. The spectral overlap between the subband states and excited levels of Mn2+ is more favored with the buffer layer presence improving the resonant energy transfer from the host to the activator. The subsequent T-4(1)-(6)A(1) transition in the Mn2+ levels results in the green photoluminescent (PL) emission at 540 nm. The maximum PL emission is observed for the film deposited at 650 degrees C. The photoluminescent excitation spectra of Zn2GeO4:Mn2+ film on ZnO/quartz substrate showed a blueshift with substrate temperature. (C) 2008 The Electrochemical Society.