Low resistance and high reflectance ohmic contacts on p-type GaN were achieved using an Ag-based metallization scheme. Oxidation annealing was the key to achieve ohmic behavior of Ag-based contacts on p-type GaN. A low contact resistivity of similar to 5x10(-5) Omega cm(2) could be achieved from Me (=Ni, Ir, Pt, or Ru)/Ag (50/1200 angstrom) contacts after annealing at 500 degrees C for 1 min in O-2 ambient. Oxidation annealing promoted the out-diffusion of Ga atoms from the GaN layer, and Ga atoms dissolved in the in-diffused Ag layer with the formation of Ag-Ga solid solution, resulting in ohmic contact formation. Using Ru/Ni/Au (500/200/500 angstrom) overlayers on the Me/Ag contacts, the excessive incorporation of oxygen molecules into the contact interfacial region, and the out-diffusion and agglomeration of Ag, were effectively prevented during oxidation annealing. As a result, a high reflectance of 87.2% at the 460 nm wavelength and a smooth surface morphology could be obtained simultaneously. (C) 2008 The Electrochemical Society.