The electrical hysteresis of polysilicon thin-film transistors (poly-Si TFTs) employing a negative data insertion (NDI) has been investigated. It is known that the image sticking in active-matrix organic light emitting diode displays using the poly-Si TFT back plane was mainly caused by the hysteresis of driving TFT in a pixel. In this paper, we propose a type of NDI method using inverse data signals in order to suppress the hysteresis of poly-Si TFTs. Experimental results show that the NDI was very effective to reduce the hysteresis level of poly-Si TFTs induced by carrier trapping and detrapping. (C) 2008 The Electrochemical Society.