Bi{Sb1-x(Nb0.992V0.008)(x)}O-4 compositions were designed with 0.05 <= x <= 0.4 and ceramics were prepared using solid state reaction method. All ceramics were well densified when sintering temperature was above 960 degrees C. Single monoclinic phase was obtained when x value was less than 0.2 and Bi{Sb-0.6(Nb0.992V0.008)(0.4)}O-4 ceramic was composed of both monoclinic phase and orthorhombic phase. As x value increased from 0.05 to 0.2, microwave dielectric constant of Bi{Sb1-x(Nb0.992V0.008)(x)}O-4 ceramics increased from 22.1 to 31.4 while Q(f) value decreasing from 41000 GHz to 8000 GHz and TCF shifting from -54.4 ppm degrees C-1 to +8 ppm degrees C-1. Bi{Sb-0.6(Nb0.992V0.008)0.4}04 ceramic has also good microwave dielectric properties with dielectric constant about 34.7, Q(f) value about 16000 GHz and TCF about +16.1 ppm degrees C-1. This kind of ceramics might be a good candidate for LTCC application. (C) 2008 Elsevier B.V. All rights reserved.