A study of growth, structure, and properties of Eu2O3 thin films were carried out. Films were grown at 500-600 degrees C temperature range on Si(1 0 0) and fused quartz from the complex of Eu(acac)(3).Phen by low pressure metalorganic chemical vapor deposition technique which has been rarely used for Eu2O3 deposition. These films were polycrystalline. Depending on growth conditions and substrates employed, these films had also possessed a parasitic phase. This phase can be removed by post-deposition annealing in oxidizing ambient. Morphology of the films was characterized by well-packed spherical mounds. Optical measurements exhibited that the bandgap of pure Eu2O3 phase was 4.4 eV. High frequency 1 MHz capacitance-voltage (C-V) measurements showed that the dielectric constant of pure Eu2O3 film was about 12. Possible effects of cation and oxygen deficiency and parasitic phase on the optical and electrical properties of Eu2O3 films have been briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.