Indium oxides were deposited by reactive ion beam assisted e-beam evaporation at room temperature. A material study was conducted through a variety of material characterization including crystal structure, electrical properties, optical properties, and chemical composition, along with an investigation of material properties as a function of primary deposition parameters such as ion flux and deposition rate. Implementing the developed semiconducting indium oxide as a channel material, the authors further demonstrated high-performance indium oxide thin-film transistors (TFTs) with conventional silicon dioxide gate dielectric derived by plasma-enhanced chemical vapor deposition (PECVD). The n-channel TFT has a threshold voltage of similar to 2.0 V, a field-effect mobility of 33 cm(2)/V s at a gate bias of 20 V, an ON/OFF current ratio of 10(8), and a subthreshold slope of 2.0 V/decade. The stability study displays a small threshold voltage shift of similar to 0.6 V under a 60 h constant current stress condition. The TFT reported here has one of the best performance characteristics in terms of field-effect mobility, ON/OFF current ratio, OFF current and device stability, using conventional and large-area foundry-compatible PECVD gate dielectrics. The device performance coupled with PECVD dielectrics makes ion beam assisted e-beam evaporation derived indium oxide TFT a promising candidate for active matrix flat-panel displays. 2009 American Vacuum Society. [DOI: 10.1116/1.3093887]