In this article, low frequency noise in HfO2/SiO2 metal-oxide-semiconductor devices with TiN metal gate on fully depleted silicon on insulator technology is analyzed. The drain current noise in linear regime is presented to determine the noise sources in such devices. The impact of different gate stack parameters such as interfacial oxide layer thickness, high-kappa layer thickness, and the oxide deposit techniques on the noise level is studied. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3072518]