The authors report on the first use of direct write electron beam lithography (DW-EBL) patterning of DNA-based materials. Water insoluble and organic solvent soluble DNA:CTMA complexes were formed by reaction of DNA polymers with cationic surfactants and other molecular species. Thin films with thicknesses ranging from 85 to 300 nm were prepared by spin coating. DW-EBL was conducted using a Raith 150 system. The resulting exposed areas demonstrated either positive or negative resist properties depending on development solution. The characteristics of the DNA:CTMA material as a patternable electron sensitive resist medium are presented for different exposure conditions (10-30 kV), development conditions, structure sizes (100 nm to 20 mu m), and structure complexities. Contrast values of similar to 2 have been obtained in both positive and negative resist modes. Both simple (20 mu m diameter circle and square) and complex (Fresnel lens) patterns with nanometer scale features (< 100 nm) in DNA films are possible using this method.