The authors have investigated electrical transport in a type II GaSb/InAs superlattice grown on GaSb using "quantitative mobility spectrum analysis." Their results indicate that the superlattice contributes a lone electron specie with an ambient temperature mobility of similar to 10(4) cm(2)/V s. Variable temperature studies in the range 50-300 K show that the carrier is associated with an activation energy of 0.27 eV, which is very close to the superlattice band gap. (C) 2008 American Vacuum Society.