Polyethylene glycol (PEG) is an additive that is commonly used as a suppressor in the semiconductor copper (Cu)-electroplating process. In this study, electrochemical impedance spectroscopy (EIS) was used to analyze the electrochemical behavior of PEG in the Cu-electroplating process. Polarization analysis, cyclic-voltammetry stripping, and cell voltage versus plating time were examined to clarify the suppression behavior of PEG. The equivalent circuit simulated from the EIS data shows that PEG inhibited the Cu-electroplating rate by increasing the charge-transfer resistance as well as the resistance of the adsorption layer. The presence of a large inductance demonstrated the strong adsorption of cuprous-PEG-chloride complexes on the Cu surface during the Cu-electroplating process. Increasing the PEG concentration appears to increase the resistances of charge transfer, the adsorption layer, and the inductance of the electroplating system. (c) 2008 American Vacuum Society.