증착두께 및 산소도입속도가 IZO 필름의 전기 및 광학적 특성에 미치는 영향

박성환; 하기룡; Sung-Hwan Park; KiRyong Ha

Applied Chemistry for Engineering, Vol.21, No.2, 224-229, April, 2010

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증착두께 및 산소도입속도가 IZO 필름의 전기 및 광학적 특성에 미치는 영향

Effects of Deposition Thickness and Oxygen Introduction Flow Rate on Electrical and Optical Properties of IZO Films

박성환, 하기룡 ^†

계명대학교 화학공학과

Sung-Hwan Park, and KiRyong Ha^†

Department of Chemical Engineering, Keimyung University, Daegu 704-701, Korea

E-mail:

초록

Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 Indium Zinc Oxide (IZO) 필름은 Indium Tin Oxide (ITO) 필름의 대체 물질로 관심을 끌고 있다. 본 연구에서는 90: 10 wt%의 In2O3와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 polynorbornene (PNB) 기판 위에 IZO 박막을 제조하였다. UV/Visible spectrophotometer, 4-Point Probe를 이용하여 증착 두께와 산소도입 속도에 따른 IZO 필름의 전기적 및 광학적 특성을 연구하였으며, SEM, XRD 및 XPS를 이용하여 증착된 IZO의 구조적 특성 및 표면조성비를 연구하였다

Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using In2O3 and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and O2 introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.

Keywords:indium zinc oxide (IZO);polynorbornene (PNB);E-beam deposition;transparent conductive oxide (TCO);flexible display

[References]

U. S. Patent 5972527, 26 Oct. (1999)
Park SH, Kim HM, Rhee BR, Gyo EY, Jpn. J. Appl. Phys., 42, 1429 (2001)
Kim HM, Jeung SK, Ahn JS, Kang YJ, Je CK, Jpn. J. Appl. Phys., 42, 223 (2003)
Noda K, Sato H, Itaya H, Yamada M, Jpn. J. Appl. Phys., 42, 217 (2003)
Jain RK, Lind RC, J. Opt. Soc. Am., 73, 647 (1983)
Moon JM, Bae JH, Jeong SW, Park NJ, Kang JW, Kim HK, J. of KIRRME (Korean), 19, 687 (2006)
Cho HN, Li YL, Min SR, Chung CW, J. Korean Ind. Eng. Chem., 17(6), 644 (2006)
Hong JS, Yoon JK, Rhee BR, Park SH, Kim JJ, Kim HM, Sae Mulli, 48, 339 (2004)
Shin B, Chung CW, J. Korean Ind. Eng. Chem., 15(3), 300 (2004)
Angiolini S, Avidano M, SID 03 DIGEST, 47, 1 (2003)
Park SK, Han JI, Kim WK, Kwak MG, Thin Solid Films, 397(1-2), 49 (2001)
Wagner CD, Riggs WM, Davis LE, Moulder GE : Handbook of X-ray Photoelectron Spectroscopy, Oxford University Press (1990)
Lee DY, Chung CW, Thin Solid Films, 518, 372 (2009)
Kim DG, Lee S, Kim DH, Lee GH, Isshiki M, Thin Solid Films, 516(8), 2045 (2008)

[Related Articles]

[1] U. S. Patent 5972527, 26 Oct. (1999)

[2] Park SH, Kim HM, Rhee BR, Gyo EY, Jpn. J. Appl. Phys., 42, 1429 (2001)

[3] Kim HM, Jeung SK, Ahn JS, Kang YJ, Je CK, Jpn. J. Appl. Phys., 42, 223 (2003)

[4] Noda K, Sato H, Itaya H, Yamada M, Jpn. J. Appl. Phys., 42, 217 (2003)

[5] Jain RK, Lind RC, J. Opt. Soc. Am., 73, 647 (1983)

[6] Moon JM, Bae JH, Jeong SW, Park NJ, Kang JW, Kim HK, J. of KIRRME (Korean), 19, 687 (2006)

[7] Cho HN, Li YL, Min SR, Chung CW, J. Korean Ind. Eng. Chem., 17(6), 644 (2006)

[8] Hong JS, Yoon JK, Rhee BR, Park SH, Kim JJ, Kim HM, Sae Mulli, 48, 339 (2004)

[9] Shin B, Chung CW, J. Korean Ind. Eng. Chem., 15(3), 300 (2004)

[10] Angiolini S, Avidano M, SID 03 DIGEST, 47, 1 (2003)

[11] Park SK, Han JI, Kim WK, Kwak MG, Thin Solid Films, 397(1-2), 49 (2001)

[12] Wagner CD, Riggs WM, Davis LE, Moulder GE : Handbook of X-ray Photoelectron Spectroscopy, Oxford University Press (1990)

[13] Lee DY, Chung CW, Thin Solid Films, 518, 372 (2009)

[14] Kim DG, Lee S, Kim DH, Lee GH, Isshiki M, Thin Solid Films, 516(8), 2045 (2008)