The purpose of this work is to deposit the CuInSe2 films on the ITO substrate by electrodeposition technique using a simplified two electrodes system and to investigate the effect of ITO sheet resistance on the fundamental properties of the resulting films. The as deposited films were annealed under argon atmosphere at 300 A degrees C during 30 min. The structural, morphological and electrical properties were characterized respectively by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistivity measurements. The optical band gap of samples was estimated using the optical absorption technique. After annealing, the XRD spectra show diffraction peaks corresponding to the single-phase chalcopyrite CuInSe2 with (112) as main reflection. The SEM images reveal a homogeneous surface and the estimated grain size was calculated from Scherrer's Equation with (112) peak lay in the range of 165-272 A.... The band gap, E (g), is a decreasing function with the ITO sheet resistance.