Seeded growth of AlN boules was achieved on m-(1 0 (1) over bar 0) and c-(0 0 0 (1) over bar) orientations by physical vapor transport (PVT). The single crystalline m- and c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12 mm in diameter and 7 mm in height were grown at source temperatures around 2280 degrees C in N-2 atmosphere at 500 Torr of total pressure. Under identical process conditions, the m- and c-plane boules exhibited the same growth rates, 150-170 mu m/h, and similar expansion angles, 22-27 degrees, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both m- and c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 10(2)-10(5) cm(-2), as characterized by X-ray topography. (C) 2009 Elsevier B.V. All rights reserved.