The microstructural characteristics and crystallographic evolutions of Ga-doped ZnO (GZO) films grown at high temperatures were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The GZO films with various film thicknesses were grown on (0001) Al2O3 substrates at 750 degrees C by RF magnetron sputtering using a 2 wt% Ga-doped ZnO single target. The (0002) ZnO peaks in the XRD patterns shifted to a higher angle with increasing film thickness and an additional (10 (1) over bar1) ZnO peak was observed in the final stage of film growth. HRTEM showed the epitaxial growth of GZO films in the initial growth stage and the formation of surface protrusions in the intermediate stage due to elastic relaxation. The surface protrusions consisted of {10 (1) over bar1), {10 (1) over bar3}, and {0002} planes. After the surface protrusions had formed, a GZO film with many c-axis tilted grains formed due to plastic relaxation, where the tilted grain boundaries had an angle of 62 degrees to the substrate. The formation of the protrusions and c-axis tilted grains was closely related to the strain status of the film induced by Ga incorporation, high-temperature growth and a high film thickness. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.