Using an AlInN intermediate layer, GaN was grown on (111)Si substrate by selective metalorganic vapor phase epitaxy. The variation of the surface morphology was investigated as a function of the In composition and thickness of the AlInN layer. It was found that the In composition in the AlInN layer was a function of the growth temperature and thickness. Because of the small band offset at the AlInN/Si hetero-interface, we have achieved a low series resistance of the order of 9 Omega (0.0036 Omega cm(2)) across the GaN/AlInN/AlN/Si layer structure. (C) 2009 Elsevier B.V. All rights reserved.