We report the experimental determination of the interband deformation potentials of indium nitride by combining both optical spectroscopy investigations and high-resolution X-ray measurements performed on a series of InN films grown by metal organic vapour-phase epitaxy. Our approach, which follows the one used for GaN by Shan et al. [Phys. Rev. B. 54 (1996) 13460], gives here for InN a(1) =-7.66 eV, a(2)=-2.59 eV, b(1) =5.06 eV, and b(2)=-2.53 eV. (C) 2009 Elsevier B.V. All rights reserved.