The formation of laterally ordered linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering is demonstrated. An InAs/InGaAsP superlattice (SL) on InP (1 0 0) serves as a template for the QD arrays grown by chemical beam epitaxy. The InAs QD arrays exhibit excellent photoluminescence emission up to room temperature which is tuned into the 1.55-mu m telecom wavelength region through the insertion of ultra-thin GaAs interlayers. Stacking of the QD arrays with identical emission wavelength upon adjusting the GaAs interlayer thickness produces a three-dimensionally self-ordered QD crystal. (C) 2008 Elsevier B.V. All rights reserved.