화학공학소재연구정보센터
Journal of Crystal Growth, Vol.311, No.3, 875-877, 2009
Hydrothermal-method-grown ZnO single crystal as fast EUV scintillator for future lithography
The temperature dependence of scintillation properties of a hydrothermal-method-grown zinc oxide (ZnO) emission is investigated using a nickel-like silver laser emitting at 13.9 nm. A broad peak at 386 nm with a full-width at half-maximum (FWHM) of 15 nm at room temperature (298 K) is obtained. The peak position tends to be blue shifted while the FWHM becomes narrower when the crystal temperature is decreased to 25 K. Streak images fitted by a double experiential decay reveal that the measured emission decay at 105 K was iota(1) = 0.88 ns and iota(2) = 2.7 ns. This decay time of a few nanoseconds is suitable for lithographic applications and is sufficiently short for the characterization of laser plasma extreme ultraviolet (EUV) sources with nanosecond durations. (C) 2008 Elsevier B.V. All rights reserved.