Nitrogen-doped ZnO films grown by plasma-assisted molecular beam epitaxy (P-MBE) have been investigated in terms of growth temperatures (300-800 degrees C). The growth rate of nitrogen-doped zinc oxide (ZnO) film decreases as growth temperature increases from 500 up to 700 degrees C since Zn-N bonds decompose. When nitrogen atoms are incorporated to be similar to 10(21)/cm(3) at low growth temperature of 300 degrees C, it is observed the significant decrease of carrier concentration down to similar to 10(16)/cm(3) and the abrupt increase of resistivity up to similar to 60 Omega cm. However, p-type conductivity is not realized due to the formation of N-H bond. (C) 2008 Elsevier B.V. All rights reserved.