화학공학소재연구정보센터
Journal of Crystal Growth, Vol.311, No.1, 79-84, 2008
Growth of Ni2MnIn films on InAs and Si
Thin films of the Heusler alloy Ni2MnIn are deposited at substrate temperatures between 50 and 300 degrees C on a variety of substrates by coevaporation of Ni and the alloy MnIn. The morphology and crystal structure of films grown on amorphous carbon films and Si3N4 membranes are investigated by transmission-electron microscopy and transmission-electron diffraction. The stoichiometry of the films is determined by energy-dispersive X-ray spectroscopy. Films on Si(1 0 0), InAs(1 0 0), and in situ cleaved (1 1 0) Surfaces of InAs are investigated using scanning-electron microscopy. Point-contact Andreev spectroscopy serves to quantify the spin polarization relevant for transport. The possibility of nanopatterning Ni2MnIn films with the lift-off technique is examined. In this context the influence of post-growth annealing on the film's morphology and crystal structure is studied. (C) 2008 Elsevier B.V. All rights reserved.