Results of the development of all metallorganic vapor-phase epitaxy (MOVPE) GaAs-based vertical cavity surface emitting lasers (VCSELs) with a regrown tunnel junction (TJ) emitting at similar to 1150-nm wavelength are presented. A zero-bias-specific resistance of similar to 3 x 10(-4) Omega cm(2) has been obtained for the GaAs-based TJ structure. VCSEL devices incorporating 4-7-mu m and 12-mu m TJ mesas exhibit an similar to 2-3 mA threshold current. Room-temperature lasing spectra are multimode with an output power of 1 and 2 mW, respectively, and thermal roll-over is above 25 mA. A 2 x 2 VCSEL array of 3-mu m aperture elements at 7-mu m pitch yielding 0.8 mW room-temperature output power has been realized. (c) 2008 Elsevier B.V. All rights reserved.