Journal of Crystal Growth, Vol.310, No.23, 4999-5002, 2008
Growth of non-polar (1 1 (2)over-bar 0)GaN on a patterned (110)Si substrate by selective MOVPE
Selective MOVPE of a (1 1 (2) over bar 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a ((1) over bar 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3 x 10(7) cm(-2) was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions. (C) 2008 Elsevier B.V. All rights reserved.