The pseudomorphic integration of an active III/V laser material onto Si substrates requires precise strain management of the entire several-mu m-thick structure at both room and growth temperature. The incorporation of B into (BGa)P allows for the deposition of tensilely strained layers on the Si substrate in order to strain compensate the highly compressively strained Ga(NAsP) active material system. It is shown that the incorporation efficiency of B under the chosen conditions is unity and that (BGa)P layers with B concentrations high enough to allow for the strain compensation of an active Ga(NAsP) laser material on Si can be grown with excellent structural quality. Therefore, Ga(NAsP)/(BGa)P multi-quantum well heterostructures (MQWHs) with high-crystal quality as determined by high-resolution X-ray diffraction (XRD) were pseudomorphically grown on (001) Si substrates. The potential of this material combination to serve as an active optoelectronic device on Si is demonstrated by efficient room-temperature photoluminescence observed from the integrated Ga(NAsP) MQWH. (C) 2008 Elsevier B.V. All rights reserved.