Polycrystalline tungsten-doped In2O3 (IWO) thin films prepared by dc reactive magnetron sputtering exhibit the high transparency in near-infrared region. The optoelectrical properties of the films were investigated in terms of different oxygen contents. The average transmittance of the films at oxygen content from 3.3% to 8.3% is approximately 90% in near-infrared region from 700 to 2500 rim, and about 94% in visible region from 400 to 700nm. The high transparency is ascribed to the low carrier concentration of less than 3.8 x 10(20) cm(-3) of IWO films. The as-deposited IWO films with minimum resistivity of 3.1 X 10(-4) Omega CM were obtained at 6.7% oxygen content. Carrier mobility reaches its highest value of 67 cm(2) V-1 s(-1). Indium tin oxide (ITO) thin film prepared under the same sputtering condition shows a similar resistivity of 3.2 X 10(-4) Omega cm but a much lower mobility of 21 cm(2)V(-1) s(-1) and high carrier concentration of 9.4 X 10(20) cm(-3), with the average transmittance of about 48% in near-infrared region and about 92% in visible region. (c) 2008 Elsevier B.V. All rights reserved.