This work shows electrical resistive-switching properties in a Cu/SbTe/W structure for use in nonvolatile memory applications. Simple test cells are fabricated by sputtering an SbTe-based chalcogenide glass onto a W bottom electrode followed by sputtering of Cu dots for top-electrode formation. Current-voltage measurements showed bipolar switching at low voltage (+/- 1 V) between two distinct states having a resistance ratio of 1 decade. Comparison with a nonswitching Pt/SbTe/W structure suggested that the electrical switching takes place at the Cu/SbTe interface. From physical and electrical analyses, the switching was discussed in terms of a trapping/detrapping mechanism within a thin oxidized interfacial layer. (C) 2008 The Electrochemical Society.