Fabrication of CdS thin films assisted by Langmuir deposition, self-assembly, and dip-pen nanolithography

Gil Sun Lee; Ji Hwon Lee; Hyun Choi; Dong June Ahn

Korean Journal of Chemical Engineering, Vol.27, No.2, 697-704, February, 2010

DOI10.1007/s11814-010-0106-x Export Citation

Fabrication of CdS thin films assisted by Langmuir deposition, self-assembly, and dip-pen nanolithography

Gil Sun Lee^{1, 2}, Ji Hwon Lee¹, Hyun Choi¹, and Dong June Ahn^{1, †}

¹Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
²Center for Integrated-Nano-Systems, Korea University, Seoul 136-701, Korea

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Thin CdS films were fabricated by Langmuir deposition, self-assembly, and dip-pen nanolithography methods. Firstly, LB films of saturated arachidic acid and LS films of unsaturated 10,12-pentacosadiynoic acid were reacted with cadmium ions and exposed to H2S gas. Formation of CdS crystal was observed with Fourier transform infrared (FTIR) spectra and atomic force microscope (AFM). Secondly, mercaptohexadecanoic acid was self-assembled on Au substrate and was reacted with CdS colloidal particles. At pH=9.1, the density of CdS colloids immobilized on Au substrate was very high compared to one at pH=5.0. Finally, thin films of CdS were also prepared on silicon and Au substrates by cadmium chloride-coated AFM tip and successive exposure of H2S gas. Localized formation of CdS crystal was suggested with AFM and depth-profiling Auger electron microscopy (AES).

Keywords:CdS;Langmuir-Blodgett Film;Langmuir-Schafer Film;Self-assembled Monolayers;Dip-pen Nanolithography

[References]

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Han Z, Yang Q, Shi J, Lu GQ, Lewis SW, Solid State Sci., 10, 563 (2008)
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Corkery RW, Langmuir, 13(14), 3591 (1997)
Nabok AV, Richardson T, McCartney C, Cowlam N, Davis F, Stirling CJM, Ray AK, Gacem V, Gibaud A, Thin Solid Films, 327-329, 510 (1998)
Roberts G, Langmuir-blodgett films, Plenum Press, New York, NY (1990)
Ahn DJ, Chae EH, Lee GS, Shim HY, Chang TE, Ahn KD, Kim JM, J. Am. Chem. Soc., 125(30), 8976 (2003)
Sagiv J, J. Am. Chem. Soc., 102, 92 (1980)
Tripp CP, Hair ML, Langmuir, 11(4), 1215 (1995)
Xia Y, Whitesides GM, Angew. Chem. Int. Edit., 37, 550 (1998)
Bernard A, Renault JP, Michel B, Bosshard HR, Delamarche E, Adv. Mater., 12(14), 1067 (2000)
Guo L, Krauss PR, Chou SY, Appl. Phys. Lett., 71, 1881 (1997)
Li M, Chen L, Chou SY, Appl. Phys. Lett, 78, 3322 (2001)
Kramer S, Fuierer RR, Gorman CB, Chem. Rev., 103(11), 4367 (2003)
Brooksby PA, Downard AJ, Langmuir, 21(5), 1672 (2005)
Bezryadin A, Dekker C, J. Vac. Sci. Technol. B, 15(4), 793 (1997)
Piner RD, Zhu J, Xu F, Hong SH, Mirkin CA, Science, 283(5402), 661 (1999)
Salaita KS, Lee SW, Ginger DS, Mirkin CA, Nanolett., 6, 2493 (2006)
Ginger DS, Zhan Ha, Mirkin CA, Angew. Chem. Int. Edit., 43, 30 (2004)
Kwak SK, Lee GS, Ahn DJ, Choi JW, Mat. Sci. Eng. C, 24, 151 (2003)
Vogel V, Christof W, J. Chem. Phys., 84, 5200 (1986)
Hyun JY, Lee GS, Kim TY, Ahn DJ, Korean J. Chem. Eng., 14(6), 533 (1997)
Erokhin V, Facci P, Carrara S, Nicolini C, J. Phys. D: Appl. Phys., 28, 1 (1997)
Boussaad S, Dziri L, Arechabaleta R, Tao NJ, Leblanc RM, Langmuir, 14(21), 6215 (1998)
Greenwood NN, Earnshaw A, Chemistry of the elements, Pergamon Press, 1st ed., 1395 (1984)

[Related Articles]

[1] Wang ZL, Characterization of nanophase materials, WILEYVCH, Weinheim, 1st ed., 315 (2000)

[2] Han Z, Yang Q, Shi J, Lu GQ, Lewis SW, Solid State Sci., 10, 563 (2008)

[3] Frenzel J, Joswig JO, Seifert G, J. Phys. Chem. C, 111, 10761 (2007)

[4] Li G, Jiang L, Peng H, Zhang B, Mater. Lett., 62, 1881 (2008)

[5] Wang Y, Herron N, J. Phys. Chem., 95, 525 (1991)

[6] Xu X, Cesarano J, Burch E, Lopez GP, Thin Solid Films, 305(1-2), 95 (1997)

[7] Ramaiah KS, Raja VS, Sharon M, J. Mater. Sci.: Mater. El., 9, 261 (1998)

[8] Corkery RW, Langmuir, 13(14), 3591 (1997)

[9] Nabok AV, Richardson T, McCartney C, Cowlam N, Davis F, Stirling CJM, Ray AK, Gacem V, Gibaud A, Thin Solid Films, 327-329, 510 (1998)

[10] Roberts G, Langmuir-blodgett films, Plenum Press, New York, NY (1990)

[11] Ahn DJ, Chae EH, Lee GS, Shim HY, Chang TE, Ahn KD, Kim JM, J. Am. Chem. Soc., 125(30), 8976 (2003)

[12] Sagiv J, J. Am. Chem. Soc., 102, 92 (1980)

[13] Tripp CP, Hair ML, Langmuir, 11(4), 1215 (1995)

[14] Xia Y, Whitesides GM, Angew. Chem. Int. Edit., 37, 550 (1998)

[15] Bernard A, Renault JP, Michel B, Bosshard HR, Delamarche E, Adv. Mater., 12(14), 1067 (2000)

[16] Guo L, Krauss PR, Chou SY, Appl. Phys. Lett., 71, 1881 (1997)

[17] Li M, Chen L, Chou SY, Appl. Phys. Lett, 78, 3322 (2001)

[18] Kramer S, Fuierer RR, Gorman CB, Chem. Rev., 103(11), 4367 (2003)

[19] Brooksby PA, Downard AJ, Langmuir, 21(5), 1672 (2005)

[20] Bezryadin A, Dekker C, J. Vac. Sci. Technol. B, 15(4), 793 (1997)

[21] Piner RD, Zhu J, Xu F, Hong SH, Mirkin CA, Science, 283(5402), 661 (1999)

[22] Salaita KS, Lee SW, Ginger DS, Mirkin CA, Nanolett., 6, 2493 (2006)

[23] Ginger DS, Zhan Ha, Mirkin CA, Angew. Chem. Int. Edit., 43, 30 (2004)

[24] Kwak SK, Lee GS, Ahn DJ, Choi JW, Mat. Sci. Eng. C, 24, 151 (2003)

[25] Vogel V, Christof W, J. Chem. Phys., 84, 5200 (1986)

[26] Hyun JY, Lee GS, Kim TY, Ahn DJ, Korean J. Chem. Eng., 14(6), 533 (1997)

[27] Erokhin V, Facci P, Carrara S, Nicolini C, J. Phys. D: Appl. Phys., 28, 1 (1997)

[28] Boussaad S, Dziri L, Arechabaleta R, Tao NJ, Leblanc RM, Langmuir, 14(21), 6215 (1998)

[29] Greenwood NN, Earnshaw A, Chemistry of the elements, Pergamon Press, 1st ed., 1395 (1984)