화학공학소재연구정보센터
Chemical Physics Letters, Vol.479, No.4-6, 255-258, 2009
On the existence of Si-C double bonded graphene-like layers
Upon analyzing an earlier experimental study by density-functional theory we have shown that graphene-like SiC layers can exist. We found that, for a particular stacking sequence, Si=C double bond was responsible for the much larger interlayer distances observed in synthesized multi-walled SiC nanotubes. The Si/C ratios in SiC layers determine the extent of interlayer distances and bonding nature. It has been also shown that for some intermediate ratios of Si:C and/or with other stacking sequences, a collapse of SiC layers to tetrahedrally bonded system is possible. We have argued that these synthesized Si=C double-bonded multi-wall silicon-carbide nanotubes may provide a pathway for future realization of SiC graphene-like materials. (c) 2009 Published by Elsevier B.V.