Deep levels in polycrystalline p-Cu2O/i-ZnO/n-ZnO/glass photovoltaic structures were studied by deep level transient spectroscopy (DLTS). Post-deposition crown-ether cyanide (CN) treatments of the samples were performed with the variation of time. DLTS spectra for all samples showed the presence of two traps localized at 0.2 eV and 0.5 eV from the top of the valence band. Effects of defect passivation and improvement of cell performance were demonstrated with the cyanide treated samples. Optimum time of cyanide treatment was found to be 3 min. Cell performance was increased from 0.4% to 0.7% for the samples undergoing the optimum post-deposition cyanide treatment. (c) 2008 Elsevier B. V. All rights reserved.