Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The structural, electrical, and optical properties of ZnO: Ga films were investigated in a wide temperature range from room temperature up to 400 degrees C. The crystallinity and surface morphology of the films are strongly dependent on the growth temperatures, which in turn exert an influence on the electrical and optical properties of the ZnO: Ga films. The film deposited at 350 degrees C exhibited the relatively well crystallinity and the lowest resistivity of 3.4 x 10(-4) Omega cm. More importantly, the low-resistance and high-transmittance ZnO: Ga films were also obtained at a low temperature of 150 degrees C by changing the sputtering powers, having acceptable properties for application as transparent conductive electrodes in LCDs and solar cells. (C) 2009 Elsevier B.V. All rights reserved.