This study investigated the optical and electrical properties of Nb-doped TiO2 thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO2 thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O-2 was suitable to produce anatase-type TiO2. A Nb-doped TiO2 thin film attained a resistivity as low as 6.7 x 10 (4) Omega cm after annealing at 350 degrees C in vacuum (< 10 (5) Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region. (C) 2009 Elsevier B.V. All rights reserved.